Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS(2)-Channel at Sub-2 nm Technology Node

In this work, WS(2) was adopted as a channel material among transition metal dichalcogenides (TMD) materials that have recently been in the spotlight, and the circuit power performance (power consumption, operating frequency) of the monolayer WS(2) field-effect transistor with a double gate structur...

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Detalles Bibliográficos
Autores principales: Park, Jihun, Ra, Changho, Lim, Jaewon, Jeon, Jongwook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268193/
https://www.ncbi.nlm.nih.gov/pubmed/35808135
http://dx.doi.org/10.3390/nano12132299

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268193/
https://www.ncbi.nlm.nih.gov/pubmed/35808135
http://dx.doi.org/10.3390/nano12132299

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