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Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS(2)-Channel at Sub-2 nm Technology Node
In this work, WS(2) was adopted as a channel material among transition metal dichalcogenides (TMD) materials that have recently been in the spotlight, and the circuit power performance (power consumption, operating frequency) of the monolayer WS(2) field-effect transistor with a double gate structur...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268193/ https://www.ncbi.nlm.nih.gov/pubmed/35808135 http://dx.doi.org/10.3390/nano12132299 |