Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO(2) for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the tr...

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Detalles Bibliográficos
Autores principales: Yan, Siao-Cheng, Wu, Chen-Han, Sun, Chong-Jhe, Lin, Yi-Wen, Yao, Yi-Ju, Wu, Yung-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268224/
https://www.ncbi.nlm.nih.gov/pubmed/35807999
http://dx.doi.org/10.3390/nano12132165

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268224/
https://www.ncbi.nlm.nih.gov/pubmed/35807999
http://dx.doi.org/10.3390/nano12132165

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