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Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO(2) for Sub-60-mV/Decade Subthreshold Slope for Low Power Application
Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs. Moreover, short channel effects were suppressed by completely surrounding the tr...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268224/ https://www.ncbi.nlm.nih.gov/pubmed/35807999 http://dx.doi.org/10.3390/nano12132165 |