Self-Powered Resistance-Switching Properties of Pr(0.7)Ca(0.3)MnO(3) Film Driven by Triboelectric Nanogenerator

As one of the promising non-volatile memories (NVMs), resistive random access memory (RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on external power to induce resistance-switching, which restricts its applications. In this work, we have developed a self-powered RRAM...

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Detalles Bibliográficos
Autores principales: Huang, Yanzi, Wan, Lingyu, Jiang, Jiang, Li, Liuyan, Zhai, Junyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268256/
https://www.ncbi.nlm.nih.gov/pubmed/35808035
http://dx.doi.org/10.3390/nano12132199

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268256/
https://www.ncbi.nlm.nih.gov/pubmed/35808035
http://dx.doi.org/10.3390/nano12132199

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