Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and (60)Co gamma-ray irradiation. The results show that when the accu...

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Detalles Bibliográficos
Autores principales: Chen, Rui, Liang, Yanan, Han, Jianwei, Lu, Qihong, Chen, Qian, Wang, Ziyu, Wang, Hao, Wang, Xuan, Yuan, Runjie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268257/
https://www.ncbi.nlm.nih.gov/pubmed/35807962
http://dx.doi.org/10.3390/nano12132126

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268257/
https://www.ncbi.nlm.nih.gov/pubmed/35807962
http://dx.doi.org/10.3390/nano12132126

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