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Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and (60)Co gamma-ray irradiation. The results show that when the accu...

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Detalles Bibliográficos
Autores principales:	Chen, Rui, Liang, Yanan, Han, Jianwei, Lu, Qihong, Chen, Qian, Wang, Ziyu, Wang, Hao, Wang, Xuan, Yuan, Runjie
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268257/ https://www.ncbi.nlm.nih.gov/pubmed/35807962 http://dx.doi.org/10.3390/nano12132126

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