Multi-Level Resistive Switching in SnSe/SrTiO(3) Heterostructure Based Memristor Device

Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO(3)(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu)...

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Detalles Bibliográficos
Autores principales: Ho, Tsz-Lung, Ding, Keda, Lyapunov, Nikolay, Suen, Chun-Hung, Wong, Lok-Wing, Zhao, Jiong, Yang, Ming, Zhou, Xiaoyuan, Dai, Ji-Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268662/
https://www.ncbi.nlm.nih.gov/pubmed/35807964
http://dx.doi.org/10.3390/nano12132128

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268662/
https://www.ncbi.nlm.nih.gov/pubmed/35807964
http://dx.doi.org/10.3390/nano12132128

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