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Multi-Level Resistive Switching in SnSe/SrTiO(3) Heterostructure Based Memristor Device

Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO(3)(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu)...

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Detalles Bibliográficos
Autores principales:	Ho, Tsz-Lung, Ding, Keda, Lyapunov, Nikolay, Suen, Chun-Hung, Wong, Lok-Wing, Zhao, Jiong, Yang, Ming, Zhou, Xiaoyuan, Dai, Ji-Yan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9268662/ https://www.ncbi.nlm.nih.gov/pubmed/35807964 http://dx.doi.org/10.3390/nano12132128

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