Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer...

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Detalles Bibliográficos
Autores principales: Kwan, D. C. M., Kesaria, M., Jiménez, J. J., Srivastava, V., Delmas, M., Liang, B. L., Morales, F. M., Huffaker, D. L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9270406/
https://www.ncbi.nlm.nih.gov/pubmed/35804001
http://dx.doi.org/10.1038/s41598-022-15538-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9270406/
https://www.ncbi.nlm.nih.gov/pubmed/35804001
http://dx.doi.org/10.1038/s41598-022-15538-3

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