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Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region

This work explores the possibility of depth profiling of inorganic materials with Megaelectron Volt Secondary Ion Mass Spectrometry using low energy primary ions (LE MeV SIMS), specifically 555 keV Cu(2+), while etching the surface with 1 keV Ar(+) ions. This is demonstrated on a dual-layer sample c...

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Autores principales: Barac, Marko, Brajković, Marko, Siketić, Zdravko, Ekar, Jernej, Bogdanović Radović, Iva, Šrut Rakić, Iva, Kovač, Janez
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9270474/
https://www.ncbi.nlm.nih.gov/pubmed/35804184
http://dx.doi.org/10.1038/s41598-022-16042-4
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author Barac, Marko
Brajković, Marko
Siketić, Zdravko
Ekar, Jernej
Bogdanović Radović, Iva
Šrut Rakić, Iva
Kovač, Janez
author_facet Barac, Marko
Brajković, Marko
Siketić, Zdravko
Ekar, Jernej
Bogdanović Radović, Iva
Šrut Rakić, Iva
Kovač, Janez
author_sort Barac, Marko
collection PubMed
description This work explores the possibility of depth profiling of inorganic materials with Megaelectron Volt Secondary Ion Mass Spectrometry using low energy primary ions (LE MeV SIMS), specifically 555 keV Cu(2+), while etching the surface with 1 keV Ar(+) ions. This is demonstrated on a dual-layer sample consisting of 50 nm Cr layer deposited on 150 nm In(2)O(5)Sn (ITO) glass. These materials proved to have sufficient secondary ion yield in previous studies using copper ions with energies of several hundred keV. LE MeV SIMS and keV SIMS depth profiles of Cr-ITO dual-layer are compared and corroborated by atomic force microscopy (AFM) and time-of-flight elastic recoil detection analysis (TOF-ERDA). The results show the potential of LE MeV SIMS depth profiling of inorganic multilayer systems in accelerator facilities equipped with MeV SIMS setup and a fairly simple sputtering source.
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spelling pubmed-92704742022-07-10 Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region Barac, Marko Brajković, Marko Siketić, Zdravko Ekar, Jernej Bogdanović Radović, Iva Šrut Rakić, Iva Kovač, Janez Sci Rep Article This work explores the possibility of depth profiling of inorganic materials with Megaelectron Volt Secondary Ion Mass Spectrometry using low energy primary ions (LE MeV SIMS), specifically 555 keV Cu(2+), while etching the surface with 1 keV Ar(+) ions. This is demonstrated on a dual-layer sample consisting of 50 nm Cr layer deposited on 150 nm In(2)O(5)Sn (ITO) glass. These materials proved to have sufficient secondary ion yield in previous studies using copper ions with energies of several hundred keV. LE MeV SIMS and keV SIMS depth profiles of Cr-ITO dual-layer are compared and corroborated by atomic force microscopy (AFM) and time-of-flight elastic recoil detection analysis (TOF-ERDA). The results show the potential of LE MeV SIMS depth profiling of inorganic multilayer systems in accelerator facilities equipped with MeV SIMS setup and a fairly simple sputtering source. Nature Publishing Group UK 2022-07-08 /pmc/articles/PMC9270474/ /pubmed/35804184 http://dx.doi.org/10.1038/s41598-022-16042-4 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Barac, Marko
Brajković, Marko
Siketić, Zdravko
Ekar, Jernej
Bogdanović Radović, Iva
Šrut Rakić, Iva
Kovač, Janez
Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region
title Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region
title_full Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region
title_fullStr Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region
title_full_unstemmed Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region
title_short Depth profiling of Cr-ITO dual-layer sample with secondary ion mass spectrometry using MeV ions in the low energy region
title_sort depth profiling of cr-ito dual-layer sample with secondary ion mass spectrometry using mev ions in the low energy region
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9270474/
https://www.ncbi.nlm.nih.gov/pubmed/35804184
http://dx.doi.org/10.1038/s41598-022-16042-4
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