Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi(2)Te(2.7)Se(0.3)

Bismuth telluride‐based thermoelectric (TE) materials are historically recognized as the best p‐type (ZT = 1.8) TE materials at room temperature. However, the poor performance of n‐type (ZT≈1.0) counterparts seriously reduces the efficiency of the device. Such performance imbalance severely impedes...

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Detalles Bibliográficos
Autores principales: Chen, Cheng‐Lung, Wang, Te‐Hsien, Yu, Zih‐Gin, Hutabalian, Yohanes, Vankayala, Ranganayakulu K., Chen, Chao‐Chih, Hsieh, Wen‐Pin, Jeng, Horng‐Tay, Wei, Da‐Hua, Chen, Yang‐Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284191/
https://www.ncbi.nlm.nih.gov/pubmed/35478495
http://dx.doi.org/10.1002/advs.202201353

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284191/
https://www.ncbi.nlm.nih.gov/pubmed/35478495
http://dx.doi.org/10.1002/advs.202201353

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