Cargando…
Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi(2)Te(2.7)Se(0.3)
Bismuth telluride‐based thermoelectric (TE) materials are historically recognized as the best p‐type (ZT = 1.8) TE materials at room temperature. However, the poor performance of n‐type (ZT≈1.0) counterparts seriously reduces the efficiency of the device. Such performance imbalance severely impedes...
Autores principales: | Chen, Cheng‐Lung, Wang, Te‐Hsien, Yu, Zih‐Gin, Hutabalian, Yohanes, Vankayala, Ranganayakulu K., Chen, Chao‐Chih, Hsieh, Wen‐Pin, Jeng, Horng‐Tay, Wei, Da‐Hua, Chen, Yang‐Yuan |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284191/ https://www.ncbi.nlm.nih.gov/pubmed/35478495 http://dx.doi.org/10.1002/advs.202201353 |
Ejemplares similares
-
N-type organic thermoelectrics: demonstration of ZT > 0.3
por: Liu, Jian, et al.
Publicado: (2020) -
High zT and Its Origin in Sb‐doped GeTe Single Crystals
por: Vankayala, Ranganayakulu K., et al.
Publicado: (2020) -
α-Ag(2)S: A Ductile Thermoelectric
Material with High ZT
por: Zhou, Wu-Xing, et al.
Publicado: (2020) -
Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
por: Duong, Anh Tuan, et al.
Publicado: (2016) -
Wide-temperature-range thermoelectric n-type Mg(3)(Sb,Bi)(2) with high average and peak zT values
por: Li, Jing-Wei, et al.
Publicado: (2023)