Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al(2)O(3)/IZO Multilayer

In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al(2)O(3)‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al(2)O(3)/IZO multilayer transparent memory has a transmittance of at least...

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Detalles Bibliográficos
Autores principales: Park, Jaemin, Huh, Daihong, Son, Soomin, Kim, Wonjoong, Ju, Sucheol, Lee, Heon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284630/
https://www.ncbi.nlm.nih.gov/pubmed/35860392
http://dx.doi.org/10.1002/gch2.202100118

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284630/
https://www.ncbi.nlm.nih.gov/pubmed/35860392
http://dx.doi.org/10.1002/gch2.202100118

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