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Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al(2)O(3)/IZO Multilayer
In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al(2)O(3)‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al(2)O(3)/IZO multilayer transparent memory has a transmittance of at least...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9284630/ https://www.ncbi.nlm.nih.gov/pubmed/35860392 http://dx.doi.org/10.1002/gch2.202100118 |