Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid

The optimized ALD infilling process for depositing Al(2)O(3) in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al(2)O(3), which is gradually deposited from the top of PbS QDs to the PbS/IGZ...

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Detalles Bibliográficos
Autores principales: Kim, Yoon-Seo, Oh, Hye-Jin, Shin, Seungki, Oh, Nuri, Park, Jin-Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9288469/
https://www.ncbi.nlm.nih.gov/pubmed/35842484
http://dx.doi.org/10.1038/s41598-022-16636-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9288469/
https://www.ncbi.nlm.nih.gov/pubmed/35842484
http://dx.doi.org/10.1038/s41598-022-16636-y

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