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Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid

The optimized ALD infilling process for depositing Al(2)O(3) in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al(2)O(3), which is gradually deposited from the top of PbS QDs to the PbS/IGZ...

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Autores principales: Kim, Yoon-Seo, Oh, Hye-Jin, Shin, Seungki, Oh, Nuri, Park, Jin-Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9288469/
https://www.ncbi.nlm.nih.gov/pubmed/35842484
http://dx.doi.org/10.1038/s41598-022-16636-y
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author Kim, Yoon-Seo
Oh, Hye-Jin
Shin, Seungki
Oh, Nuri
Park, Jin-Seong
author_facet Kim, Yoon-Seo
Oh, Hye-Jin
Shin, Seungki
Oh, Nuri
Park, Jin-Seong
author_sort Kim, Yoon-Seo
collection PubMed
description The optimized ALD infilling process for depositing Al(2)O(3) in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al(2)O(3), which is gradually deposited from the top of PbS QDs to the PbS/IGZO interface (1) passivates the trap sites up to the interface of PbS/IGZO without disturbing charge transfer and (2) prevents QDs deterioration caused by outside air. Therefore, an Al(2)O(3) infilled PbS QD/IGZO hybrid phototransistor (AI-PTs) exhibited enhanced photoresponsivity from 96.4 A/W to 1.65 × 10(2) A/W and a relaxation time decrease from 0.52 to 0.03 s under NIR light (880 nm) compared to hybrid phototransistors without Al(2)O(3) (RF-PTs). In addition, AI-PTs also showed improved shelf stability over 4 months compared to RF-PTs. Finally, all devices we manufactured have the potential to be manufactured in an array, and this ALD technique is a means of fabricating robust QDs/metal oxide hybrids for optoelectronic devices.
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spelling pubmed-92884692022-07-18 Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid Kim, Yoon-Seo Oh, Hye-Jin Shin, Seungki Oh, Nuri Park, Jin-Seong Sci Rep Article The optimized ALD infilling process for depositing Al(2)O(3) in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al(2)O(3), which is gradually deposited from the top of PbS QDs to the PbS/IGZO interface (1) passivates the trap sites up to the interface of PbS/IGZO without disturbing charge transfer and (2) prevents QDs deterioration caused by outside air. Therefore, an Al(2)O(3) infilled PbS QD/IGZO hybrid phototransistor (AI-PTs) exhibited enhanced photoresponsivity from 96.4 A/W to 1.65 × 10(2) A/W and a relaxation time decrease from 0.52 to 0.03 s under NIR light (880 nm) compared to hybrid phototransistors without Al(2)O(3) (RF-PTs). In addition, AI-PTs also showed improved shelf stability over 4 months compared to RF-PTs. Finally, all devices we manufactured have the potential to be manufactured in an array, and this ALD technique is a means of fabricating robust QDs/metal oxide hybrids for optoelectronic devices. Nature Publishing Group UK 2022-07-16 /pmc/articles/PMC9288469/ /pubmed/35842484 http://dx.doi.org/10.1038/s41598-022-16636-y Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Kim, Yoon-Seo
Oh, Hye-Jin
Shin, Seungki
Oh, Nuri
Park, Jin-Seong
Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
title Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
title_full Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
title_fullStr Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
title_full_unstemmed Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
title_short Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
title_sort enhanced performance and stability in ingazno nir phototransistors with alumina-infilled quantum dot solid
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9288469/
https://www.ncbi.nlm.nih.gov/pubmed/35842484
http://dx.doi.org/10.1038/s41598-022-16636-y
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