Cargando…
Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
The optimized ALD infilling process for depositing Al(2)O(3) in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al(2)O(3), which is gradually deposited from the top of PbS QDs to the PbS/IGZ...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9288469/ https://www.ncbi.nlm.nih.gov/pubmed/35842484 http://dx.doi.org/10.1038/s41598-022-16636-y |