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Strong Fermi-Level Pinning in GeS–Metal Nanocontacts
[Image: see text] Germanium sulfide (GeS) is a layered monochalcogenide semiconductor with a band gap of about 1.6 eV. To verify the suitability of GeS for field-effect-based device applications, a detailed understanding of the electronic transport mechanisms of GeS–metal junctions is required. In t...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9289947/ https://www.ncbi.nlm.nih.gov/pubmed/35865793 http://dx.doi.org/10.1021/acs.jpcc.2c02827 |