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Strong Fermi-Level Pinning in GeS–Metal Nanocontacts

[Image: see text] Germanium sulfide (GeS) is a layered monochalcogenide semiconductor with a band gap of about 1.6 eV. To verify the suitability of GeS for field-effect-based device applications, a detailed understanding of the electronic transport mechanisms of GeS–metal junctions is required. In t...

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Detalles Bibliográficos
Autores principales:	Sun, Yuxuan, Jiao, Zhen, Zandvliet, Harold J. W., Bampoulis, Pantelis
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2022
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9289947/ https://www.ncbi.nlm.nih.gov/pubmed/35865793 http://dx.doi.org/10.1021/acs.jpcc.2c02827

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