Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and applicatio...

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Detalles Bibliográficos
Autores principales: Baek, Sungpyo, Yoo, Hyun Ho, Ju, Jae Hyeok, Sriboriboon, Panithan, Singh, Prashant, Niu, Jingjie, Park, Jin‐Hong, Shin, Changhwan, Kim, Yunseok, Lee, Sungjoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9313508/
https://www.ncbi.nlm.nih.gov/pubmed/35570404
http://dx.doi.org/10.1002/advs.202200566

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9313508/
https://www.ncbi.nlm.nih.gov/pubmed/35570404
http://dx.doi.org/10.1002/advs.202200566

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