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Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022)

Ferroelectric Field‐Effect‐Transistors In article number 2200566, Sungjoo Lee and co‐workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP(2)S(6)/α‐In(2)Se(3)). Leveraging enhanced polarization originatin...

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Detalles Bibliográficos
Autores principales: Baek, Sungpyo, Yoo, Hyun Ho, Ju, Jae Hyeok, Sriboriboon, Panithan, Singh, Prashant, Niu, Jingjie, Park, Jin‐Hong, Shin, Changhwan, Kim, Yunseok, Lee, Sungjoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9313941/
http://dx.doi.org/10.1002/advs.202270132