Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022)

Ferroelectric Field‐Effect‐Transistors In article number 2200566, Sungjoo Lee and co‐workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP(2)S(6)/α‐In(2)Se(3)). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with a long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. [Image: see text]