Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications

Flip-chip microbump (μ-bump) bonding technology between indium phosphide (InP) and silicon carbide (SiC) substrates for a millimeter-wave (mmW) wireless communication application is demonstrated. The proposed process of flip-chip μ-bump bonding to achieve high-yield performance utilizes a SiO(2)-bas...

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Detalles Bibliográficos
Autores principales: Lee, Jongwon, Lee, Jae Yong, Song, Jonghyun, Sim, Gapseop, Ko, Hyoungho, Kong, Seong Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320157/
https://www.ncbi.nlm.nih.gov/pubmed/35888889
http://dx.doi.org/10.3390/mi13071072

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320157/
https://www.ncbi.nlm.nih.gov/pubmed/35888889
http://dx.doi.org/10.3390/mi13071072

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