A Timing-Based Split-Path Sensing Circuit for STT-MRAM

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM with fast performance comparable to that of a st...

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Detalles Bibliográficos
Autores principales: Ishdorj, Bayartulga, Kim, Jeongyeon, Kim, Jae Hwan, Na, Taehui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320188/
https://www.ncbi.nlm.nih.gov/pubmed/35888821
http://dx.doi.org/10.3390/mi13071004

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320188/
https://www.ncbi.nlm.nih.gov/pubmed/35888821
http://dx.doi.org/10.3390/mi13071004

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