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A Timing-Based Split-Path Sensing Circuit for STT-MRAM
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM with fast performance comparable to that of a st...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320188/ https://www.ncbi.nlm.nih.gov/pubmed/35888821 http://dx.doi.org/10.3390/mi13071004 |