Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory

GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO(x)/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N(2) flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growt...

Descripción completa

Detalles Bibliográficos
Autores principales: Gridchin, Vladislav O., Dvoretckaia, Liliia N., Kotlyar, Konstantin P., Reznik, Rodion R., Parfeneva, Alesya V., Dragunova, Anna S., Kryzhanovskaya, Natalia V., Dubrovskii, Vladimir G., Cirlin, George E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320236/
https://www.ncbi.nlm.nih.gov/pubmed/35889566
http://dx.doi.org/10.3390/nano12142341

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320236/
https://www.ncbi.nlm.nih.gov/pubmed/35889566
http://dx.doi.org/10.3390/nano12142341

Ejemplares similares