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Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory

GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO(x)/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N(2) flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growt...

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Detalles Bibliográficos
Autores principales:	Gridchin, Vladislav O., Dvoretckaia, Liliia N., Kotlyar, Konstantin P., Reznik, Rodion R., Parfeneva, Alesya V., Dragunova, Anna S., Kryzhanovskaya, Natalia V., Dubrovskii, Vladimir G., Cirlin, George E.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320236/ https://www.ncbi.nlm.nih.gov/pubmed/35889566 http://dx.doi.org/10.3390/nano12142341

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