Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs

Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation. However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in s...

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Detalles Bibliográficos
Autores principales: Wang, Dong-Hyun, Lee, Khwang-Sun, Park, Jun-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320427/
https://www.ncbi.nlm.nih.gov/pubmed/35888803
http://dx.doi.org/10.3390/mi13070987

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9320427/
https://www.ncbi.nlm.nih.gov/pubmed/35888803
http://dx.doi.org/10.3390/mi13070987

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