Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnO(x) Dielectric Layer Formed by Thermal Oxidation of Sn

SnO(x) films were deposited on a hydrogen-terminated diamond by thermal oxidation of Sn. The X-ray photoelectron spectroscopy result implies partial oxidation of Sn film on the diamond surface. The leakage current and capacitance–voltage properties of Al/SnO(x)/H-diamond metal-oxide-semiconductor di...

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Detalles Bibliográficos
Autores principales: He, Shi, Wang, Yanfeng, Chen, Genqiang, Wang, Juan, Li, Qi, Zhang, Qianwen, Wang, Ruozheng, Zhang, Minghui, Wang, Wei, Wang, Hongxing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9321096/
https://www.ncbi.nlm.nih.gov/pubmed/35888549
http://dx.doi.org/10.3390/ma15145082

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9321096/
https://www.ncbi.nlm.nih.gov/pubmed/35888549
http://dx.doi.org/10.3390/ma15145082

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