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Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages
Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated. In order to reasonably predict those challenges, a TCAD (technology comp...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9322117/ https://www.ncbi.nlm.nih.gov/pubmed/35888955 http://dx.doi.org/10.3390/mi13071139 |