Temperature Dependence of Electron Leakage Current in InGaN Blue Light-Emitting Diode Structures

We investigated the temperature dependence of the electron leakage current in the AlGaN electron-blocking layer (EBL) of an InGaN/GaN blue light-emitting diode (LED) structure at temperatures between 20 and 100 °C. The percentage of electron leakage current was experimentally determined by fitting t...

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Detalles Bibliográficos
Autores principales: Onwukaeme, Chibuzo, Lee, Bohae, Ryu, Han-Youl
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323033/
https://www.ncbi.nlm.nih.gov/pubmed/35889629
http://dx.doi.org/10.3390/nano12142405

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323033/
https://www.ncbi.nlm.nih.gov/pubmed/35889629
http://dx.doi.org/10.3390/nano12142405

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