Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during capping and their relation to different growth condit...

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Detalles Bibliográficos
Autores principales: Ruiz, Nazaret, Fernandez, Daniel, Luna, Esperanza, Stanojević, Lazar, Ben, Teresa, Flores, Sara, Braza, Verónica, Gallego-Carro, Alejandro, Bárcena-González, Guillermo, Yañez, Andres, Ulloa, José María, González, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323063/
https://www.ncbi.nlm.nih.gov/pubmed/35889728
http://dx.doi.org/10.3390/nano12142504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323063/
https://www.ncbi.nlm.nih.gov/pubmed/35889728
http://dx.doi.org/10.3390/nano12142504

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