The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — [Formula: see text]-Bi and [Formula: see text]-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The crystal structure depe...

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Detalles Bibliográficos
Autores principales: Stanionytė, Sandra, Malinauskas, Tadas, Niaura, Gediminas, Skapas, Martynas, Devenson, Jan, Krotkus, Arūnas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323643/
https://www.ncbi.nlm.nih.gov/pubmed/35888313
http://dx.doi.org/10.3390/ma15144847

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323643/
https://www.ncbi.nlm.nih.gov/pubmed/35888313
http://dx.doi.org/10.3390/ma15144847

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