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The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — [Formula: see text]-Bi and [Formula: see text]-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The crystal structure depe...

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Autores principales: Stanionytė, Sandra, Malinauskas, Tadas, Niaura, Gediminas, Skapas, Martynas, Devenson, Jan, Krotkus, Arūnas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323643/
https://www.ncbi.nlm.nih.gov/pubmed/35888313
http://dx.doi.org/10.3390/ma15144847
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author Stanionytė, Sandra
Malinauskas, Tadas
Niaura, Gediminas
Skapas, Martynas
Devenson, Jan
Krotkus, Arūnas
author_facet Stanionytė, Sandra
Malinauskas, Tadas
Niaura, Gediminas
Skapas, Martynas
Devenson, Jan
Krotkus, Arūnas
author_sort Stanionytė, Sandra
collection PubMed
description Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — [Formula: see text]-Bi and [Formula: see text]-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The crystal structure dependencies on the layer thicknesses of these films were analyzed. [Formula: see text]-Bi layers were epitaxial and homogenous in lateral regions that are greater than 200 nm despite the layer thickness. Further, an increase in in-plane 2 [Formula: see text] values showed the biaxial compressive strain. For comparison, [Formula: see text]-Bi layers are misoriented in six in-plane directions and have [Formula: see text]-Bi inserts in thicker layers. That leads to smaller (about 60 nm) lateral crystallites which are compressively strained in all three directions. Raman measurement confirmed the XRD results. The blue-sift of Raman signals compared with bulk Bi crystals occurs due to the phonon confinement effect, which is larger in the thinnest [Formula: see text]-Bi layers due to higher compression.
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spelling pubmed-93236432022-07-27 The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates Stanionytė, Sandra Malinauskas, Tadas Niaura, Gediminas Skapas, Martynas Devenson, Jan Krotkus, Arūnas Materials (Basel) Article Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — [Formula: see text]-Bi and [Formula: see text]-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The crystal structure dependencies on the layer thicknesses of these films were analyzed. [Formula: see text]-Bi layers were epitaxial and homogenous in lateral regions that are greater than 200 nm despite the layer thickness. Further, an increase in in-plane 2 [Formula: see text] values showed the biaxial compressive strain. For comparison, [Formula: see text]-Bi layers are misoriented in six in-plane directions and have [Formula: see text]-Bi inserts in thicker layers. That leads to smaller (about 60 nm) lateral crystallites which are compressively strained in all three directions. Raman measurement confirmed the XRD results. The blue-sift of Raman signals compared with bulk Bi crystals occurs due to the phonon confinement effect, which is larger in the thinnest [Formula: see text]-Bi layers due to higher compression. MDPI 2022-07-12 /pmc/articles/PMC9323643/ /pubmed/35888313 http://dx.doi.org/10.3390/ma15144847 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Stanionytė, Sandra
Malinauskas, Tadas
Niaura, Gediminas
Skapas, Martynas
Devenson, Jan
Krotkus, Arūnas
The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
title The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
title_full The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
title_fullStr The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
title_full_unstemmed The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
title_short The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates
title_sort crystalline structure of thin bismuth layers grown on silicon (111) substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323643/
https://www.ncbi.nlm.nih.gov/pubmed/35888313
http://dx.doi.org/10.3390/ma15144847
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