Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and othe...

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Detalles Bibliográficos
Autores principales: Chen, Xuyan, Chen, Zhiming, Xiao, Lei, Hao, Yigang, Wang, Han, Ding, Yingtao, Zhang, Ziyue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323921/
https://www.ncbi.nlm.nih.gov/pubmed/35888964
http://dx.doi.org/10.3390/mi13071147

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9323921/
https://www.ncbi.nlm.nih.gov/pubmed/35888964
http://dx.doi.org/10.3390/mi13071147

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