Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement

Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasi...

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Detalles Bibliográficos
Autores principales: Yun, Minghui, Cai, Miao, Yang, Daoguo, Yang, Yiren, Xiao, Jing, Zhang, Guoqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9324417/
https://www.ncbi.nlm.nih.gov/pubmed/35888892
http://dx.doi.org/10.3390/mi13071075

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9324417/
https://www.ncbi.nlm.nih.gov/pubmed/35888892
http://dx.doi.org/10.3390/mi13071075

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