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Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement
Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasi...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9324417/ https://www.ncbi.nlm.nih.gov/pubmed/35888892 http://dx.doi.org/10.3390/mi13071075 |