Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete understanding of the deformation and removal m...

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Detalles Bibliográficos
Autores principales: Wang, Haoxiang, Gao, Shang, Kang, Renke, Guo, Xiaoguang, Li, Honggang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9324887/
https://www.ncbi.nlm.nih.gov/pubmed/35889713
http://dx.doi.org/10.3390/nano12142489

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9324887/
https://www.ncbi.nlm.nih.gov/pubmed/35889713
http://dx.doi.org/10.3390/nano12142489

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