Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications

The aim of this work was a deep spectroscopical characterization of a thick 4H SiC epitaxial layer and a comparison of results between samples before and after a thermal oxidation process carried out at 1400 °C for 48 h. Through Raman and photoluminescence (PL) spectroscopies, the carrier lifetimes...

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Detalles Bibliográficos
Autores principales: Meli, Alessandro, Muoio, Annamaria, Reitano, Riccardo, Sangregorio, Enrico, Calcagno, Lucia, Trotta, Antonio, Parisi, Miriam, Meda, Laura, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325141/
https://www.ncbi.nlm.nih.gov/pubmed/35888859
http://dx.doi.org/10.3390/mi13071042

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325141/
https://www.ncbi.nlm.nih.gov/pubmed/35888859
http://dx.doi.org/10.3390/mi13071042

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