Nonvolatile ferroelectric domain wall memory integrated on silicon

Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall mem...

Descripción completa

Detalles Bibliográficos
Autores principales: Sun, Haoying, Wang, Jierong, Wang, Yushu, Guo, Changqing, Gu, Jiahui, Mao, Wei, Yang, Jiangfeng, Liu, Yuwei, Zhang, Tingting, Gao, Tianyi, Fu, Hanyu, Zhang, Tingjun, Hao, Yufeng, Gu, Zhengbin, Wang, Peng, Huang, Houbing, Nie, Yuefeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325887/
https://www.ncbi.nlm.nih.gov/pubmed/35882838
http://dx.doi.org/10.1038/s41467-022-31763-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9325887/
https://www.ncbi.nlm.nih.gov/pubmed/35882838
http://dx.doi.org/10.1038/s41467-022-31763-w

Ejemplares similares