The Spectral Response of the Dual Microdisk Resonator Based on BaTiO(3) Resistive Random Access Memory

With the resistive random access memory (ReRAM) devices based on the Al/BaTiO(3) (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that the device with 60 nm thick BTO can be switche...

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Detalles Bibliográficos
Autores principales: Chuang, Ricky Wenkuei, Liu, Bo-Liang, Huang, Cheng-Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9332622/
https://www.ncbi.nlm.nih.gov/pubmed/35893173
http://dx.doi.org/10.3390/mi13081175

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9332622/
https://www.ncbi.nlm.nih.gov/pubmed/35893173
http://dx.doi.org/10.3390/mi13081175

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