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Observation of in-plane shear stress fields in off-axis SiC wafers by birefringence imaging
For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under condit...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9348879/ https://www.ncbi.nlm.nih.gov/pubmed/35974736 http://dx.doi.org/10.1107/S1600576722006483 |