Characteristics of Vertical Ga(2)O(3) Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

[Image: see text] We present the device properties of a nickel (Ni)–gallium oxide (Ga(2)O(3)) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga(2)O(3)/In was created using a chemical vapor-deposited hBN film on a...

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Detalles Bibliográficos
Autores principales: Rama, Venkata Krishna Rao, Ranade, Ajinkya K., Desai, Pradeep, Todankar, Bhagyashri, Kalita, Golap, Suzuki, Hiroo, Tanemura, Masaki, Hayashi, Yasuhiko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9352259/
https://www.ncbi.nlm.nih.gov/pubmed/35936403
http://dx.doi.org/10.1021/acsomega.2c00506

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9352259/
https://www.ncbi.nlm.nih.gov/pubmed/35936403
http://dx.doi.org/10.1021/acsomega.2c00506

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