Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

[Image: see text] Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etchi...

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Detalles Bibliográficos
Autores principales: Calabretta, Cristiano, Scuderi, Viviana, Bongiorno, Corrado, Cannizzaro, Annalisa, Anzalone, Ruggero, Calcagno, Lucia, Mauceri, Marco, Crippa, Danilo, Boninelli, Simona, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9354508/
https://www.ncbi.nlm.nih.gov/pubmed/35942119
http://dx.doi.org/10.1021/acs.cgd.2c00515

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9354508/
https://www.ncbi.nlm.nih.gov/pubmed/35942119
http://dx.doi.org/10.1021/acs.cgd.2c00515

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