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Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC
[Image: see text] Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etchi...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9354508/ https://www.ncbi.nlm.nih.gov/pubmed/35942119 http://dx.doi.org/10.1021/acs.cgd.2c00515 |
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author | Calabretta, Cristiano Scuderi, Viviana Bongiorno, Corrado Cannizzaro, Annalisa Anzalone, Ruggero Calcagno, Lucia Mauceri, Marco Crippa, Danilo Boninelli, Simona La Via, Francesco |
author_facet | Calabretta, Cristiano Scuderi, Viviana Bongiorno, Corrado Cannizzaro, Annalisa Anzalone, Ruggero Calcagno, Lucia Mauceri, Marco Crippa, Danilo Boninelli, Simona La Via, Francesco |
author_sort | Calabretta, Cristiano |
collection | PubMed |
description | [Image: see text] Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etching, and high-resolution scanning transmission electron microscopy (HRSTEM) to investigate the effect of nitrogen doping on the distribution of stacking faults (SFs) and assess how increasing dosages of nitrogen during chemical vapor deposition (CVD) growth inhibits the development of SFs. An innovative angle-resolved SEM observation approach of molten KOH-etched samples resulted in detailed statistics on the density of the different types of defects as a function of the growth thickness of 3C-SiC free-standing samples with varied levels of nitrogen doping. Moreover, we proceeded to shed light on defects revealed by a diamond-shaped pit. In the past, they were conventionally associated with dislocations (Ds) due to what happens in 4H-SiC, where the formation of pits is always linked with the presence of Ds. In this work, the supposed Ds were observed at high magnification (by HRSTEM), demonstrating that principally they are partial dislocations (PDs) that delimit an SF, whose development and propagation are suppressed by the presence of nitrogen. These results were compared with VESTA simulations, which allowed to simulate the 3C-SiC lattice to design two 3C-lattice domains delimited by different types of SFs. In addition, through previous experimental evidence, a preferential impact of nitrogen on the closure of 6H-like SFs was observed as compared to 4H-like SFs. |
format | Online Article Text |
id | pubmed-9354508 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-93545082022-08-06 Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC Calabretta, Cristiano Scuderi, Viviana Bongiorno, Corrado Cannizzaro, Annalisa Anzalone, Ruggero Calcagno, Lucia Mauceri, Marco Crippa, Danilo Boninelli, Simona La Via, Francesco Cryst Growth Des [Image: see text] Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etching, and high-resolution scanning transmission electron microscopy (HRSTEM) to investigate the effect of nitrogen doping on the distribution of stacking faults (SFs) and assess how increasing dosages of nitrogen during chemical vapor deposition (CVD) growth inhibits the development of SFs. An innovative angle-resolved SEM observation approach of molten KOH-etched samples resulted in detailed statistics on the density of the different types of defects as a function of the growth thickness of 3C-SiC free-standing samples with varied levels of nitrogen doping. Moreover, we proceeded to shed light on defects revealed by a diamond-shaped pit. In the past, they were conventionally associated with dislocations (Ds) due to what happens in 4H-SiC, where the formation of pits is always linked with the presence of Ds. In this work, the supposed Ds were observed at high magnification (by HRSTEM), demonstrating that principally they are partial dislocations (PDs) that delimit an SF, whose development and propagation are suppressed by the presence of nitrogen. These results were compared with VESTA simulations, which allowed to simulate the 3C-SiC lattice to design two 3C-lattice domains delimited by different types of SFs. In addition, through previous experimental evidence, a preferential impact of nitrogen on the closure of 6H-like SFs was observed as compared to 4H-like SFs. American Chemical Society 2022-06-29 2022-08-03 /pmc/articles/PMC9354508/ /pubmed/35942119 http://dx.doi.org/10.1021/acs.cgd.2c00515 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Calabretta, Cristiano Scuderi, Viviana Bongiorno, Corrado Cannizzaro, Annalisa Anzalone, Ruggero Calcagno, Lucia Mauceri, Marco Crippa, Danilo Boninelli, Simona La Via, Francesco Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC |
title | Impact of Nitrogen on the Selective Closure of Stacking
Faults in 3C-SiC |
title_full | Impact of Nitrogen on the Selective Closure of Stacking
Faults in 3C-SiC |
title_fullStr | Impact of Nitrogen on the Selective Closure of Stacking
Faults in 3C-SiC |
title_full_unstemmed | Impact of Nitrogen on the Selective Closure of Stacking
Faults in 3C-SiC |
title_short | Impact of Nitrogen on the Selective Closure of Stacking
Faults in 3C-SiC |
title_sort | impact of nitrogen on the selective closure of stacking
faults in 3c-sic |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9354508/ https://www.ncbi.nlm.nih.gov/pubmed/35942119 http://dx.doi.org/10.1021/acs.cgd.2c00515 |
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