Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers

Potential barriers between the waveguide layer and MQW active region may influence injection efficiency significantly, which is important in improving output characteristics of GaN-based green laser diodes (LDs). In this study, potential barriers and injection efficiency of LDs are investigated by s...

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Detalles Bibliográficos
Autores principales: Chen, Zhenyu, Liang, Feng, Zhao, Degang, Yang, Jing, Chen, Ping, Jiang, Desheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370496/
https://www.ncbi.nlm.nih.gov/pubmed/35957010
http://dx.doi.org/10.3390/nano12152581

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370496/
https://www.ncbi.nlm.nih.gov/pubmed/35957010
http://dx.doi.org/10.3390/nano12152581

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