Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual sub...

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Detalles Bibliográficos
Autores principales: Xu, Buqing, Wang, Guilei, Du, Yong, Miao, Yuanhao, Li, Ben, Zhao, Xuewei, Lin, Hongxiao, Yu, Jiahan, Su, Jiale, Dong, Yan, Ye, Tianchun, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370541/
https://www.ncbi.nlm.nih.gov/pubmed/35957135
http://dx.doi.org/10.3390/nano12152704

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370541/
https://www.ncbi.nlm.nih.gov/pubmed/35957135
http://dx.doi.org/10.3390/nano12152704

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