Cargando…

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual sub...

Descripción completa

Detalles Bibliográficos
Autores principales:	Xu, Buqing, Wang, Guilei, Du, Yong, Miao, Yuanhao, Li, Ben, Zhao, Xuewei, Lin, Hongxiao, Yu, Jiahan, Su, Jiale, Dong, Yan, Ye, Tianchun, Radamson, Henry H.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9370541/ https://www.ncbi.nlm.nih.gov/pubmed/35957135 http://dx.doi.org/10.3390/nano12152704

Ejemplares similares

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
por: Du, Yong, et al.
Publicado: (2022)

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods
por: Zhukov, Alexey E., et al.
Publicado: (2020)

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
por: Azeza, Bilel, et al.
Publicado: (2015)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Quantitative strain analysis of InAs/GaAs quantum dot materials
por: Vullum, Per Erik, et al.
Publicado: (2017)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation
por: Hussain, Sajid, et al.
Publicado: (2016)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate
por: Xu, Buqing, et al.
Publicado: (2022)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
por: Kiravittaya, S, et al.
Publicado: (2006)

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation
por: Hu, Xian, et al.
Publicado: (2020)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
por: Huang, Xiaoying, et al.
Publicado: (2021)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
por: Strom, NW, et al.
Publicado: (2007)

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
por: Tommila, Juha, et al.
Publicado: (2012)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
por: Souaf, Manel, et al.
Publicado: (2015)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells
por: Kada, T., et al.
Publicado: (2017)

Strain Modulation of Selectively and/or Globally Grown Ge Layers
por: Du, Yong, et al.
Publicado: (2021)

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate
por: Shang, Xiangjun, et al.
Publicado: (2023)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon
por: Wirths, Stephan, et al.
Publicado: (2018)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006)

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
por: Helfrich, Mathieu, et al.
Publicado: (2011)

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
por: Chen, Zi-Bin, et al.
Publicado: (2012)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate
por: Konishi, T., et al.
Publicado: (2017)

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
por: Rakhlin, Maxim, et al.
Publicado: (2022)

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
por: Xu, Buqing, et al.
Publicado: (2022)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
por: Petrushkov, Mikhail O., et al.
Publicado: (2022)

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
por: Wang, Lu, et al.
Publicado: (2009)

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
por: Lee, Shuh Ying, et al.
Publicado: (2013)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
por: Su, Xiang-Bin, et al.
Publicado: (2018)

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
por: Kwan, D. C. M., et al.
Publicado: (2022)

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
por: Zhang, Hongyi, et al.
Publicado: (2012)

Cannot write session to /tmp/vufind_sessions/sess_he9vdj7pvq1enuhapo7tkrvgiq