High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the...

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Detalles Bibliográficos
Autores principales: Deng, Siyu, Wei, Jie, Zhang, Cheng, Liao, Dezun, Sun, Tao, Yang, Kemeng, Xi, Lufan, Zhang, Bo, Luo, Xiaorong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9372255/
https://www.ncbi.nlm.nih.gov/pubmed/35951269
http://dx.doi.org/10.1186/s11671-022-03713-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9372255/
https://www.ncbi.nlm.nih.gov/pubmed/35951269
http://dx.doi.org/10.1186/s11671-022-03713-4

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